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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *Fast Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 700 V 400 V 8 V 7 A 14 A 2 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ Ta=25 PC Total Power Dissipation @ TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 5mA; RBE= IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 4A; IB= 0.8A B 2SC5764 MIN 400 700 8 TYP. MAX UNIT V V V 0.8 1.5 V V A A IC= 4A; IB= 0.8A B VCB= 400V; IE= 0 Collector Output Capacitance w w w. sem isc VEB= 5V; IC= 0 IC= 0.8A; VCE= 5V IC= 4A; VCE= 5V IC= 1mA; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 0.8A; VCE= 10V .cn i 20 10 10 80 17 10 10 50 pF MHz Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A, IB1= 1A; IB2= -2A; RL= 40; VCC= 200V 0.5 2.5 0.25 s s s hFE-1 Classifications M 20-40 N 30-50 isc Websitewww.iscsemi.cn 2 |
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